Hana nā keʻena hakahaka Semiconductor ma ke ʻano he mau mea lawe sila koʻikoʻi no ke kālai ʻana, ka waiho ʻana o PVD a me nā kaʻina hana hoʻokomo ion, ʻo ke koho pono ʻole o ka alloy e hoʻoulu ai i ka outgassing kiʻekiʻe, ka deflection structural a i ʻole ka leakage vacuum, e hoʻohaʻahaʻa pololei ana i ka hua hana wafer. ʻO 5052 H32 a me 5083 H321 no Al-Mg hiki ʻole ke mālama wela ʻia.nā papa alumini i hana ʻia,akā naʻe, ua hoʻokaʻawale nā ​​​​​​hui magnesium a me manganese like ʻole i kā lākou mau hiʻohiʻona lua semiconductor kūpono.

Hoʻokumu ka Kemika i ka palena hana. Loaʻa iā 5052 he 2.2 ~ 2.8 wt% Mg me ka element Mn marginal ma lalo o 0.1%, ʻoiai ʻo 5083 e hoʻonui i ka ʻike Mg i 4.0 ~ 4.9% me 0.4 ~ 1.0% manganese no ka hoʻomaʻemaʻe ʻana i ka palaoa a me ka hoʻoikaika ʻana i ka hopena paʻa. Hāʻawi kēia hakahaka compositional i ka ikaika tensile hope loa he 38 ~ 42% kiʻekiʻe ma 5083 (310 ~ 320MPa vs 215 ~ 230MPa o 5052), e hana ana i kā lākou watershed noi mua no ka hoʻolālā hale semiconductor.

Hoʻomalu ʻo 5052 i nā keʻena hoʻoili liʻiliʻi, paʻakikī-profile a me nā pā laka ukana liʻiliʻi i nā lako semiconductor waena. ʻO kona ʻano anuanu kiʻekiʻe a me ka ductility e hoʻomaʻalahi i ka mīkini ʻeke hohonu CNC multi-axis, ka wili ʻana i ke kahawai hoʻoluʻu paʻakikī a me ka hoʻokumu ʻana o ka flange lahilahi me ka ʻole o ka deformation springback. Hoʻohanohano ka alloy i ka helu outgassing haʻahaʻa i kāohi ʻia ma lalo o 10⁻⁸ Torr·L/(s·cm²) ma hope o ka electropolishing pololei, e hoʻokūkū ana i nā kūlana sila kumu ultra high vacuum (UHV) no nā lua hana liʻiliʻi ʻano batch. ʻO ka pono o ke kumukūʻai kekahi mea koʻikoʻi: ʻo ka hoʻolilo ʻana i nā mea maka o 5052 e hōʻemi ana i ka 12 ~ 15% versus 5083, kūpono no nā casings peripheral semiconductor maʻamau i hana nui ʻia e OEM a me nā lua hoʻopaʻa sensor kōkua. Hoʻomaopopo kā mākou hale hana i ka blanking nui-nui a mehoʻopau i ka mīkini ʻana o 5052 mau pepa, nā kaola paʻa a me nā paipu alumini wili ʻole me ka hoʻomanawanui dimensional ±0.003mm ma o nā kikowaena machining CNC ʻelima-axis.

E hoʻololi i nā keʻena hana nui hana kaumaha, a lilo ʻo 5083 i mea hiki ʻole ke pani ʻia. ʻO kona paʻakikī mechanical kiʻekiʻe e kūʻē i ka hoʻololi ʻokoʻa o ke kaomi vacuum cyclic a me ka hoʻomoe hou ʻana o ka thermal cycling ma lalo o nā kūlana hana wela kiʻekiʻe-haʻahaʻa i loko o nā lua deposition. Hōʻike ka H321 tempered 5083 i ke kū'ē ʻana i ka stress corrosion cracking (SCC) i hoʻonui ʻia e kūʻē i ke kinoea hana corrosive halogen-based, koʻikoʻi no nā lako etch holomua i hōʻike ʻia i ka lewa plasma fluorine. ʻOi aku ka paʻakikī cryogenic kiʻekiʻe e kūpono i nā keʻena hana semiconductor haʻahaʻa wela e holo ana ma kahi hana sub zero, e pale ana i ka hāʻule ʻana o ka haki brittle ma lalo o ka haʻalulu thermal.

Kākoʻo kā mākou ikaika hana kūloko i ka mīkini hana maʻamau no nā metala ʻelua. Hoʻolako ʻia me ka hale hana maʻemaʻe Class 10,000, ka mea ʻike leak spectrometer helium mass a me ka laina hoʻomaʻemaʻe ultrasonic aunoa, hoʻokō mākou i ka lawelawe hoʻokahi-kū mai ka ʻoki ʻana i ka papa alumini, ka mīkini CNC pololei, ka wili TIG inert-gas a hiki i ka hoʻopau ʻana i ka ʻili maikaʻi loa no nā ʻāpana lua semiconductor. Hoʻopuka ka hana mahina ma mua o 35 tons o nā ʻāpana mīkini 5052/5083 i hoʻopau ʻia, e uhi ana i ka pā alumini maʻamau, ka pā alumini paʻa a me ka lako waiwai maka o ka paipu alumini hollow me ka hana ʻana o ke keʻena i hoʻopau ʻia.

No nā mea kūʻai aku i huikau e pili ana i ke koho ʻana i nā māka:koho iā 5052 no ka māmā, nā lua liʻiliʻi paʻakikī koʻikoʻi. E koho i ka 5083 no ka nui nui, ukana kiʻekiʻe, ʻano corrosive nā keʻena hana kumu. Hāʻawi kā mākou hui ʻenekinia i ka simulation structural FEA manuahi a me ke kūkākūkā koho mea e hoʻonui i kāu kālā kūʻai semiconductor enclosure a me ke kūpaʻa lako lōʻihi.